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NP100N055PUK-E1-AY

NP100N055PUK-E1-AY Renesas Electronics Corporation

np100n055pukmos-field-effect-transistor Hersteller: Renesas Electronics Corporation
Description: MOSFET N-CH 55V 100A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+3.54 EUR
1600+ 3.03 EUR
Mindestbestellmenge: 800
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Technische Details NP100N055PUK-E1-AY Renesas Electronics Corporation

Description: MOSFET N-CH 55V 100A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 100A (Tc), Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V, Power Dissipation (Max): 1.8W (Ta), 176W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V.

Weitere Produktangebote NP100N055PUK-E1-AY nach Preis ab 2.16 EUR bis 5.86 EUR

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Preis ohne MwSt
NP100N055PUK-E1-AY NP100N055PUK-E1-AY Hersteller : Renesas Electronics REN_r07ds0589ej0200_pomosfet_DST_20180524-2930622.pdf MOSFETs POWER AUTO MOS MP-25LZP ANL2 OTHER
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+5.26 EUR
10+ 3.91 EUR
25+ 3.8 EUR
100+ 2.9 EUR
250+ 2.89 EUR
500+ 2.78 EUR
800+ 2.16 EUR
NP100N055PUK-E1-AY NP100N055PUK-E1-AY Hersteller : Renesas Electronics Corporation np100n055pukmos-field-effect-transistor Description: MOSFET N-CH 55V 100A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.25mOhm @ 50A, 10V
Power Dissipation (Max): 1.8W (Ta), 176W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 120 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7350 pF @ 25 V
auf Bestellung 1710 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4+5.86 EUR
10+ 4.92 EUR
100+ 3.98 EUR
Mindestbestellmenge: 4
NP100N055PUK-E1-AY Hersteller : Renesas np100n055pukmos-field-effect-transistor MP-25ZP/TO-263NCH, SINGLE, MP-25ZP/TO-263, 55V, ID(DC)100A, Anzahl je Verpackung: 1 Stücke
auf Bestellung 3 Stücke:
Lieferzeit 7-21 Tag (e)