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NP180N055TUK-E1-AY

NP180N055TUK-E1-AY Renesas Electronics America Inc

np180n055tukmos-field-effect-transistor Hersteller: Renesas Electronics America Inc
Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+5.36 EUR
Mindestbestellmenge: 800
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Technische Details NP180N055TUK-E1-AY Renesas Electronics America Inc

Description: MOSFET N-CH 55V 180A TO263-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 180A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V, Power Dissipation (Max): 1.8W (Ta), 348W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-263-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 55 V, Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V.

Weitere Produktangebote NP180N055TUK-E1-AY nach Preis ab 6.3 EUR bis 8.55 EUR

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Preis ohne MwSt
NP180N055TUK-E1-AY NP180N055TUK-E1-AY Hersteller : Renesas Electronics America Inc np180n055tukmos-field-effect-transistor Description: MOSFET N-CH 55V 180A TO263-7
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 180A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 90A, 10V
Power Dissipation (Max): 1.8W (Ta), 348W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 294 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 16050 pF @ 25 V
auf Bestellung 1397 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.55 EUR
10+ 7.69 EUR
100+ 6.3 EUR
Mindestbestellmenge: 3
NP180N055TUK-E1-AY NP180N055TUK-E1-AY Hersteller : Renesas Electronics REN_r07ds0593ej0200_pomosfet_DST_20180524-2931039.pdf MOSFET MOSFET
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