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NSBC114EDP6T5G

NSBC114EDP6T5G onsemi

dtc114ed-d.pdf Hersteller: onsemi
Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
auf Bestellung 14 Stücke:
Lieferzeit 10-14 Tag (e)
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Produktbewertung abgeben

Technische Details NSBC114EDP6T5G onsemi

Description: TRANS PREBIAS 2NPN 50V SOT963, Packaging: Tape & Reel (TR), Package / Case: SOT-963, Mounting Type: Surface Mount, Transistor Type: 2 NPN - Pre-Biased (Dual), Power - Max: 408mW, Current - Collector (Ic) (Max): 100mA, Voltage - Collector Emitter Breakdown (Max): 50V, Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V, Resistor - Base (R1): 10kOhms, Resistor - Emitter Base (R2): 10kOhms, Supplier Device Package: SOT-963.

Weitere Produktangebote NSBC114EDP6T5G nach Preis ab 0.14 EUR bis 0.46 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSBC114EDP6T5G Hersteller : onsemi DTC114ED_D-2310747.pdf Digital Transistors SOT-963 DUAL NBRT
auf Bestellung 2311 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.46 EUR
10+ 0.36 EUR
100+ 0.23 EUR
1000+ 0.17 EUR
2500+ 0.14 EUR
Mindestbestellmenge: 7
NSBC114EDP6T5G NSBC114EDP6T5G Hersteller : ON Semiconductor dtc114ed-d.pdf Trans Digital BJT NPN 50V 100mA 408mW 6-Pin SOT-963 T/R
Produkt ist nicht verfügbar
NSBC114EDP6T5G NSBC114EDP6T5G Hersteller : onsemi dtc114ed-d.pdf Description: TRANS PREBIAS 2NPN 50V SOT963
Packaging: Tape & Reel (TR)
Package / Case: SOT-963
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 408mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SOT-963
Produkt ist nicht verfügbar