NSS12601CF8T1G onsemi
Hersteller: onsemi
Description: TRANS NPN 12V 6A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: ChipFET™
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 830 mW
Description: TRANS NPN 12V 6A CHIPFET
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
Frequency - Transition: 140MHz
Supplier Device Package: ChipFET™
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 12 V
Power - Max: 830 mW
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 0.53 EUR |
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Technische Details NSS12601CF8T1G onsemi
Description: TRANS NPN 12V 6A CHIPFET, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V, Frequency - Transition: 140MHz, Supplier Device Package: ChipFET™, Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 12 V, Power - Max: 830 mW.
Weitere Produktangebote NSS12601CF8T1G nach Preis ab 0.59 EUR bis 1.39 EUR
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NSS12601CF8T1G | Hersteller : onsemi |
Description: TRANS NPN 12V 6A CHIPFET Packaging: Cut Tape (CT) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V Frequency - Transition: 140MHz Supplier Device Package: ChipFET™ Current - Collector (Ic) (Max): 6 A Voltage - Collector Emitter Breakdown (Max): 12 V Power - Max: 830 mW |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS12601CF8T1G | Hersteller : ON Semiconductor |
auf Bestellung 3315 Stücke: Lieferzeit 21-28 Tag (e) |
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NSS12601CF8T1G | Hersteller : ON Semiconductor | Trans GP BJT NPN 12V 6A 1400mW Automotive 8-Pin Chip FET T/R |
Produkt ist nicht verfügbar |
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NSS12601CF8T1G | Hersteller : onsemi | Bipolar Transistors - BJT HEX SCHMITT TRIGGER INVERTOR |
Produkt ist nicht verfügbar |