auf Bestellung 3000 Stücke:
Lieferzeit 87-91 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.05 EUR |
10+ | 0.9 EUR |
100+ | 0.62 EUR |
500+ | 0.49 EUR |
1000+ | 0.4 EUR |
3000+ | 0.34 EUR |
9000+ | 0.31 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NSS60100DMTTBG onsemi
Description: TRANS 2PNP 60V 1A, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Transistor Type: 2 PNP (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 2.27W, Current - Collector (Ic) (Max): 1A, Voltage - Collector Emitter Breakdown (Max): 60V, Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V, Frequency - Transition: 155MHz, Supplier Device Package: 6-WDFN (2x2), Part Status: Active.
Weitere Produktangebote NSS60100DMTTBG nach Preis ab 0.4 EUR bis 1.06 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NSS60100DMTTBG | Hersteller : onsemi |
Description: TRANS 2PNP 60V 1A Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
auf Bestellung 5413 Stücke: Lieferzeit 10-14 Tag (e) |
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NSS60100DMTTBG | Hersteller : ON Semiconductor | Trans GP BJT PNP 60V 1A 2270mW 6-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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NSS60100DMTTBG | Hersteller : onsemi |
Description: TRANS 2PNP 60V 1A Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Transistor Type: 2 PNP (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Power - Max: 2.27W Current - Collector (Ic) (Max): 1A Voltage - Collector Emitter Breakdown (Max): 60V Vce Saturation (Max) @ Ib, Ic: 300mV @ 100mA, 1A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V Frequency - Transition: 155MHz Supplier Device Package: 6-WDFN (2x2) Part Status: Active |
Produkt ist nicht verfügbar |