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NSV1C301ET4G

NSV1C301ET4G onsemi

NSS1C301E_D-2318170.pdf Hersteller: onsemi
Bipolar Transistors - BJT 3 A, 100 V Low VCE(sat) NPN Transistor
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+1.29 EUR
10+ 1.12 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.55 EUR
2500+ 0.49 EUR
5000+ 0.46 EUR
Mindestbestellmenge: 3
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Technische Details NSV1C301ET4G onsemi

Description: TRANS NPN 100V 3A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V, Frequency - Transition: 120MHz, Supplier Device Package: DPAK, Grade: Automotive, Current - Collector (Ic) (Max): 3 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 2.1 W, Qualification: AEC-Q101.

Weitere Produktangebote NSV1C301ET4G nach Preis ab 0.56 EUR bis 1.3 EUR

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NSV1C301ET4G NSV1C301ET4G Hersteller : onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q101
auf Bestellung 2495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
14+1.3 EUR
16+ 1.13 EUR
100+ 0.78 EUR
500+ 0.65 EUR
1000+ 0.56 EUR
Mindestbestellmenge: 14
NSV1C301ET4G NSV1C301ET4G Hersteller : onsemi nss1c301e-d.pdf Description: TRANS NPN 100V 3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: DPAK
Grade: Automotive
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 2.1 W
Qualification: AEC-Q101
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NSV1C301ET4G NSV1C301ET4G Hersteller : ON Semiconductor NSS1C301E-D-278477.pdf Bipolar Transistors - BJT BIPOLAR XTSR 3A/100V
Produkt ist nicht verfügbar