Produkte > ONSEMI > NSV60601MZ4T3G
NSV60601MZ4T3G

NSV60601MZ4T3G onsemi

nss60601mz4-d.pdf Hersteller: onsemi
Description: TRANS NPN 60V 6A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 364000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
4000+0.37 EUR
8000+ 0.35 EUR
12000+ 0.32 EUR
Mindestbestellmenge: 4000
Produktrezensionen
Produktbewertung abgeben

Technische Details NSV60601MZ4T3G onsemi

Description: TRANS NPN 60V 6A SOT223, Packaging: Tape & Reel (TR), Package / Case: TO-261-4, TO-261AA, Mounting Type: Surface Mount, Transistor Type: NPN, Operating Temperature: -55°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A, Current - Collector Cutoff (Max): 100nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V, Frequency - Transition: 100MHz, Supplier Device Package: SOT-223 (TO-261), Current - Collector (Ic) (Max): 6 A, Voltage - Collector Emitter Breakdown (Max): 60 V, Power - Max: 800 mW.

Weitere Produktangebote NSV60601MZ4T3G nach Preis ab 0.34 EUR bis 0.97 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NSV60601MZ4T3G NSV60601MZ4T3G Hersteller : onsemi NSS60601MZ4_D-2318292.pdf Bipolar Transistors - BJT NPN 60V/6A LOW VCE(SAT)
auf Bestellung 15296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
7+0.46 EUR
10+ 0.42 EUR
500+ 0.4 EUR
1000+ 0.37 EUR
2000+ 0.36 EUR
4000+ 0.34 EUR
Mindestbestellmenge: 7
NSV60601MZ4T3G NSV60601MZ4T3G Hersteller : onsemi nss60601mz4-d.pdf Description: TRANS NPN 60V 6A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 600mA, 6A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-223 (TO-261)
Current - Collector (Ic) (Max): 6 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 364000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.97 EUR
22+ 0.84 EUR
100+ 0.58 EUR
500+ 0.48 EUR
1000+ 0.41 EUR
2000+ 0.37 EUR
Mindestbestellmenge: 19
NSV60601MZ4T3G NSV60601MZ4T3G Hersteller : ON Semiconductor 480nss60601mz4-d.pdf Trans GP BJT NPN 60V 6A 2000mW Automotive 4-Pin(3+Tab) SOT-223 T/R
Produkt ist nicht verfügbar