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NTBG022N120M3S

NTBG022N120M3S onsemi

ntbg022n120m3s-d.pdf Hersteller: onsemi
Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+20.81 EUR
Mindestbestellmenge: 800
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Technische Details NTBG022N120M3S onsemi

Description: SIC MOSFET 1200 V 22 MOHM M3S SE, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 72A (Tc), Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V, Power Dissipation (Max): 234W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 20mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V.

Weitere Produktangebote NTBG022N120M3S nach Preis ab 20.68 EUR bis 30.13 EUR

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NTBG022N120M3S NTBG022N120M3S Hersteller : onsemi NTBG022N120M3S_D-3150324.pdf MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 22 mohm, 1200 V, M3S, D2PAK-7L
auf Bestellung 931 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.94 EUR
10+ 26.38 EUR
25+ 25.66 EUR
50+ 24.24 EUR
100+ 22.81 EUR
250+ 22.11 EUR
500+ 20.68 EUR
NTBG022N120M3S NTBG022N120M3S Hersteller : onsemi ntbg022n120m3s-d.pdf Description: SIC MOSFET 1200 V 22 MOHM M3S SE
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 72A (Tc)
Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
Power Dissipation (Max): 234W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 142 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
auf Bestellung 1426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+30.13 EUR
10+ 26.55 EUR
100+ 22.96 EUR
NTBG022N120M3S Hersteller : ON Semiconductor ntbg022n120m3s-d.pdf SiC MOSFET 1200 V 22 mohm
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)