NTBG028N170M1 onsemi
Hersteller: onsemi
Description: SIC MOSFET 1700 V 28 MOHM M1 SER
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V
Power Dissipation (Max): 428W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V
Description: SIC MOSFET 1700 V 28 MOHM M1 SER
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 71A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V
Power Dissipation (Max): 428W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 20mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1700 V
Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V
auf Bestellung 763 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 58.19 EUR |
10+ | 51.84 EUR |
100+ | 45.5 EUR |
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Technische Details NTBG028N170M1 onsemi
Description: SIC MOSFET 1700 V 28 MOHM M1 SER, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 71A (Tc), Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V, Power Dissipation (Max): 428W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 20mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1700 V, Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V.
Weitere Produktangebote NTBG028N170M1 nach Preis ab 42.56 EUR bis 59.19 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NTBG028N170M1 | Hersteller : onsemi | MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 28 mohm, 1700 V, M1, D2PAK-7L |
auf Bestellung 1004 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBG028N170M1 | Hersteller : onsemi |
Description: SIC MOSFET 1700 V 28 MOHM M1 SER Packaging: Tape & Reel (TR) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 71A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 60A, 20V Power Dissipation (Max): 428W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 20mA Supplier Device Package: D2PAK-7 Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1700 V Gate Charge (Qg) (Max) @ Vgs: 222 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 4160 pF @ 800 V |
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