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NTBG030N120M3S

NTBG030N120M3S onsemi

NTBG030N120M3S_D-3398632.pdf Hersteller: onsemi
MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 29 mohm, 1200 V, M3S, D2PAK-7L
auf Bestellung 964 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.83 EUR
10+ 25.4 EUR
25+ 24.71 EUR
50+ 23.34 EUR
100+ 21.96 EUR
250+ 21.28 EUR
500+ 19.91 EUR
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Technische Details NTBG030N120M3S onsemi

Description: SILICON CARBIDE (SIC) MOSFET - E, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 77A (Tc), Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V, Power Dissipation (Max): 348W (Tc), Vgs(th) (Max) @ Id: 4.4V @ 15mA, Supplier Device Package: D2PAK-7, Drive Voltage (Max Rds On, Min Rds On): 18V, Vgs (Max): +22V, -10V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V.

Weitere Produktangebote NTBG030N120M3S nach Preis ab 22.12 EUR bis 29.04 EUR

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NTBG030N120M3S NTBG030N120M3S Hersteller : onsemi NTBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
auf Bestellung 783 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+29.04 EUR
10+ 25.58 EUR
100+ 22.12 EUR
NTBG030N120M3S Hersteller : ON Semiconductor ntbg030n120m3s-d.pdf Silicon Carbide (SiC) MOSFET
auf Bestellung 1600 Stücke:
Lieferzeit 14-21 Tag (e)
NTBG030N120M3S NTBG030N120M3S Hersteller : onsemi NTBG030N120M3S-D.PDF Description: SILICON CARBIDE (SIC) MOSFET - E
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 30A, 18V
Power Dissipation (Max): 348W (Tc)
Vgs(th) (Max) @ Id: 4.4V @ 15mA
Supplier Device Package: D2PAK-7
Drive Voltage (Max Rds On, Min Rds On): 18V
Vgs (Max): +22V, -10V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 2430 pF @ 800 V
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