Produkte > ONSEMI > NTBGS002N06C
NTBGS002N06C

NTBGS002N06C onsemi

NTBGS002N06C_D-2318581.pdf Hersteller: onsemi
MOSFET Power MOSFET, 60 V, 2.2 m?, 211 A, Single N-Channel, D2PAK7 Power MOSFET, 60 V, 2.0 m?, 252 A, Single N-Channel, D2PAK7
auf Bestellung 800 Stücke:
Lieferzeit 374-378 Tag (e)
Anzahl Preis ohne MwSt
1+15.56 EUR
10+ 13.68 EUR
25+ 13.09 EUR
100+ 11.42 EUR
250+ 11.11 EUR
500+ 10.6 EUR
800+ 8.96 EUR
Produktrezensionen
Produktbewertung abgeben

Technische Details NTBGS002N06C onsemi

Description: POWER MOSFET, 60 V, 2.2 M?, 211, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc), Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V, Power Dissipation (Max): 3.7W (Ta), 178W (Tc), Vgs(th) (Max) @ Id: 4V @ 225µA, Supplier Device Package: D2PAK (TO-263), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, 12V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V.

Weitere Produktangebote NTBGS002N06C

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTBGS002N06C NTBGS002N06C Hersteller : ON Semiconductor ntbgs002n06c-d.pdf Trans MOSFET N-CH 60V 30A 7-Pin(6+Tab) D2PAK T/R
Produkt ist nicht verfügbar
NTBGS002N06C NTBGS002N06C Hersteller : onsemi ntbgs002n06c-d.pdf Description: POWER MOSFET, 60 V, 2.2 M?, 211
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 225µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
Produkt ist nicht verfügbar
NTBGS002N06C NTBGS002N06C Hersteller : onsemi ntbgs002n06c-d.pdf Description: POWER MOSFET, 60 V, 2.2 M?, 211
Packaging: Cut Tape (CT)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
Vgs(th) (Max) @ Id: 4V @ 225µA
Supplier Device Package: D2PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
Produkt ist nicht verfügbar