NTBL060N065SC1 onsemi
Hersteller: onsemi
MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TOLL
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.6 EUR |
| 10+ | 11.65 EUR |
| 25+ | 10.58 EUR |
| 100+ | 9.7 EUR |
| 250+ | 9.13 EUR |
| 500+ | 8.57 EUR |
| 1000+ | 8.11 EUR |
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Technische Details NTBL060N065SC1 onsemi
Description: M2 650V SIC MOSFET 60MOHM WITH T, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 6.5mA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V.
Weitere Produktangebote NTBL060N065SC1
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTBL060N065SC1 | Hersteller : onsemi |
Description: M2 650V SIC MOSFET 60MOHM WITH T Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
Produkt ist nicht verfügbar |
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NTBL060N065SC1 | Hersteller : onsemi |
Description: M2 650V SIC MOSFET 60MOHM WITH T Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 46A (Tc) Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V Power Dissipation (Max): 170W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 6.5mA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 15V, 18V Vgs (Max): +22V, -8V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V |
Produkt ist nicht verfügbar |