NTBLS1D5N10MCTXG onsemi
Hersteller: onsemiDescription: MOSFET - POWER, SINGLE, N-CHANNE
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 3.4W (Ta), 322W (Tc)
Vgs(th) (Max) @ Id: 4V @ 799µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 2000+ | 6.09 EUR |
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Technische Details NTBLS1D5N10MCTXG onsemi
Description: MOSFET - POWER, SINGLE, N-CHANNE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc), Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V, Power Dissipation (Max): 3.4W (Ta), 322W (Tc), Vgs(th) (Max) @ Id: 4V @ 799µA, Supplier Device Package: 8-HPSOF, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V.
Weitere Produktangebote NTBLS1D5N10MCTXG nach Preis ab 6.5 EUR bis 11.46 EUR
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NTBLS1D5N10MCTXG | Hersteller : onsemi |
MOSFET MOSFET - Power, Single, N-Channel, TOLL, 100 V, 1.53 mohm, 312 A |
auf Bestellung 1928 Stücke: Lieferzeit 10-14 Tag (e) |
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NTBLS1D5N10MCTXG | Hersteller : onsemi |
Description: MOSFET - POWER, SINGLE, N-CHANNE Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 312A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 3.4W (Ta), 322W (Tc) Vgs(th) (Max) @ Id: 4V @ 799µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 131 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 50 V |
auf Bestellung 2228 Stücke: Lieferzeit 10-14 Tag (e) |
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