NTE125 NTE Electronics, Inc
Hersteller: NTE Electronics, Inc
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Box
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Standard Recovery >500ns, > 200mA (Io)
Technology: Standard
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 600 V
auf Bestellung 21069 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.06 EUR |
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Technische Details NTE125 NTE Electronics, Inc
Description: DIODE GEN PURP 1KV 1A DO41, Packaging: Box, Package / Case: DO-204AL, DO-41, Axial, Mounting Type: Through Hole, Speed: Standard Recovery >500ns, > 200mA (Io), Technology: Standard, Current - Average Rectified (Io): 1A, Supplier Device Package: DO-41, Operating Temperature - Junction: -65°C ~ 175°C, Part Status: Active, Voltage - DC Reverse (Vr) (Max): 1000 V, Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A, Current - Reverse Leakage @ Vr: 10 µA @ 600 V.
Weitere Produktangebote NTE125 nach Preis ab 1.11 EUR bis 1.45 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTE125 | Hersteller : NTE Electronics, Inc |
Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Bag Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Standard Recovery >500ns, > 200mA (Io) Technology: Standard Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 600 V |
auf Bestellung 115887 Stücke: Lieferzeit 10-14 Tag (e) |
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NTE125 | Hersteller : NTE Electronics, Inc. | Rectifier Diode Si 1KV 1A 2-Pin DO-41 |
auf Bestellung 300 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE125 | Hersteller : NTE Electronics, Inc. | Rectifier Diode Si 1KV 1A 2-Pin DO-41 |
auf Bestellung 3146 Stücke: Lieferzeit 14-21 Tag (e) |
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NTE125 | Hersteller : NTE Electronics, Inc. | Rectifier Diode Si 1KV 1A 2-Pin DO-41 |
Produkt ist nicht verfügbar |
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NTE125 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 50A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Case: DO41 Max. forward voltage: 1.1V Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NTE125 | Hersteller : NTE Electronics |
Category: THT universal diodes Description: Diode: rectifying; THT; 1kV; 1A; Ifsm: 50A; DO41; Ufmax: 1.1V Type of diode: rectifying Mounting: THT Max. off-state voltage: 1kV Load current: 1A Semiconductor structure: single diode Max. forward impulse current: 50A Case: DO41 Max. forward voltage: 1.1V |
Produkt ist nicht verfügbar |