NTGS3130NT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 20V 4.23A 6TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1.4V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.6 EUR |
| 6000+ | 0.55 EUR |
| 15000+ | 0.53 EUR |
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Technische Details NTGS3130NT1G onsemi
Description: MOSFET N-CH 20V 4.23A 6TSOP, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta), Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V, Power Dissipation (Max): 600mW (Ta), Vgs(th) (Max) @ Id: 1.4V @ 250µA, Supplier Device Package: 6-TSOP, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V.
Weitere Produktangebote NTGS3130NT1G nach Preis ab 0.49 EUR bis 1.53 EUR
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NTGS3130NT1G | Hersteller : onsemi |
MOSFET POWER MOSFET 20V 5.6A SNGL CH |
auf Bestellung 8013 Stücke: Lieferzeit 10-14 Tag (e) |
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NTGS3130NT1G | Hersteller : onsemi |
Description: MOSFET N-CH 20V 4.23A 6TSOP Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.23A (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 5.6A, 4.5V Power Dissipation (Max): 600mW (Ta) Vgs(th) (Max) @ Id: 1.4V @ 250µA Supplier Device Package: 6-TSOP Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±8V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 20.3 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 935 pF @ 16 V |
auf Bestellung 16905 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTGS3130NT1G | Hersteller : ON Semiconductor |
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auf Bestellung 21 Stücke: Lieferzeit 21-28 Tag (e) |
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| NTGS3130NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 19A Power dissipation: 0.6W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 19Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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| NTGS3130NT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 4.1A; Idm: 19A; 600mW; TSOP6 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 20V Drain current: 4.1A Pulsed drain current: 19A Power dissipation: 0.6W Case: TSOP6 Gate-source voltage: ±8V On-state resistance: 19Ω Mounting: SMD Gate charge: 13.2nC Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |