Technische Details NTLUD4C26NTAG onsemi
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 30V, Drain current: 5.3A, Power dissipation: 1.7W, Case: uDFN6, Gate-source voltage: ±12V, On-state resistance: 21mΩ, Mounting: SMD, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 3000 Stücke.
Weitere Produktangebote NTLUD4C26NTAG
Foto | Bezeichnung | Hersteller | Beschreibung |
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NTLUD4C26NTAG | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.7W Case: uDFN6 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 3000 Stücke |
Produkt ist nicht verfügbar |
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NTLUD4C26NTAG | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 30V; 5.3A; 1.7W; uDFN6 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 30V Drain current: 5.3A Power dissipation: 1.7W Case: uDFN6 Gate-source voltage: ±12V On-state resistance: 21mΩ Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
Produkt ist nicht verfügbar |