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NTMD3N08LR2

NTMD3N08LR2 onsemi

ntmd3n08lr2-d.pdf Hersteller: onsemi
Description: MOSFET PWR N-CHAN DUAL 80V 8SOIC
Packaging: Bulk
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.1W
Drain to Source Voltage (Vdss): 80V
Current - Continuous Drain (Id) @ 25°C: 2.3A
Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V
Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
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Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1374+0.39 EUR
Mindestbestellmenge: 1374
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Technische Details NTMD3N08LR2 onsemi

Description: MOSFET PWR N-CHAN DUAL 80V 8SOIC, Packaging: Bulk, Package / Case: 8-SOIC (0.154", 3.90mm Width), Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Technology: MOSFET (Metal Oxide), Power - Max: 3.1W, Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 2.3A, Input Capacitance (Ciss) (Max) @ Vds: 480pF @ 25V, Rds On (Max) @ Id, Vgs: 215mOhm @ 2.5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 15nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 3V @ 250µA, Supplier Device Package: 8-SOIC, Part Status: Obsolete.

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NTMD3N08LR2 NTMD3N08LR2 Hersteller : onsemi NTMD3N08LR2_D-2318885.pdf MOSFET 80V 2.3A N-Channel
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