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NTMFD1D6N03P8

NTMFD1D6N03P8 onsemi


Hersteller: onsemi
Description: MOSFET 2N-CH 30V 17A/56A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 1722000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+1.1 EUR
6000+ 1.06 EUR
9000+ 1.02 EUR
Mindestbestellmenge: 3000
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Technische Details NTMFD1D6N03P8 onsemi

Description: MOSFET 2N-CH 30V 17A/56A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc), Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V, Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active.

Weitere Produktangebote NTMFD1D6N03P8 nach Preis ab 1.08 EUR bis 2.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NTMFD1D6N03P8 NTMFD1D6N03P8 Hersteller : onsemi Description: MOSFET 2N-CH 30V 17A/56A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.1W (Ta), 23W (Tc), 2.3W (Ta), 29W (Tc)
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 56A (Tc), 32A (Ta), 109A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 1715pF @ 15V, 6430pF @ 15V
Rds On (Max) @ Id, Vgs: 5mOhm @ 17A, 10V, 1.6mOhm @ 32A, 10V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, 87nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3V @ 250µA, 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
auf Bestellung 1724994 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
8+2.45 EUR
10+ 2.03 EUR
100+ 1.61 EUR
500+ 1.36 EUR
1000+ 1.16 EUR
Mindestbestellmenge: 8
NTMFD1D6N03P8 Hersteller : onsemi MOSFET PT8 N-CH DUAL 30V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
2+2.48 EUR
10+ 2.08 EUR
100+ 1.65 EUR
250+ 1.52 EUR
500+ 1.38 EUR
1000+ 1.18 EUR
3000+ 1.08 EUR
Mindestbestellmenge: 2