NTMFS008N12MCT1G onsemi
Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 12
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V
Power Dissipation (Max): 2.7W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V
Description: SINGLE N-CHANNEL POWER MOSFET 12
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V
Power Dissipation (Max): 2.7W (Ta), 102W (Tc)
Vgs(th) (Max) @ Id: 4V @ 200µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V
auf Bestellung 696 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
5+ | 3.85 EUR |
10+ | 3.2 EUR |
100+ | 2.55 EUR |
500+ | 2.16 EUR |
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Technische Details NTMFS008N12MCT1G onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 12, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc), Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V, Power Dissipation (Max): 2.7W (Ta), 102W (Tc), Vgs(th) (Max) @ Id: 4V @ 200µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V.
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NTMFS008N12MCT1G | Hersteller : onsemi | MOSFET PTNG 120V SG |
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NTMFS008N12MCT1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 120V 12A 5-Pin SO-FL EP T/R |
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NTMFS008N12MCT1G | Hersteller : onsemi |
Description: SINGLE N-CHANNEL POWER MOSFET 12 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 79A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 36A, 10V Power Dissipation (Max): 2.7W (Ta), 102W (Tc) Vgs(th) (Max) @ Id: 4V @ 200µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 60 V |
Produkt ist nicht verfügbar |