NTMFS020N06CT1G onsemi
auf Bestellung 1500 Stücke:
Lieferzeit 213-217 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 1.06 EUR |
10+ | 0.94 EUR |
100+ | 0.64 EUR |
500+ | 0.54 EUR |
1000+ | 0.46 EUR |
1500+ | 0.41 EUR |
3000+ | 0.39 EUR |
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Technische Details NTMFS020N06CT1G onsemi
Description: MOSFET N-CH 60V 9A/28A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc), Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V, Power Dissipation (Max): 3.4W (Ta), 31W (Tc), Vgs(th) (Max) @ Id: 4V @ 20µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V.
Weitere Produktangebote NTMFS020N06CT1G nach Preis ab 0.54 EUR bis 1.09 EUR
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NTMFS020N06CT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V |
auf Bestellung 1476 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS020N06CT1G | Hersteller : ON Semiconductor |
auf Bestellung 1450 Stücke: Lieferzeit 21-28 Tag (e) |
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NTMFS020N06CT1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 9A/28A 5DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 19.6mOhm @ 4A, 10V Power Dissipation (Max): 3.4W (Ta), 31W (Tc) Vgs(th) (Max) @ Id: 4V @ 20µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 5.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 355 pF @ 30 V |
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