NTMFS3D2N10MDT1G onsemi
Hersteller: onsemiMOSFET N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.2mohm N-Channel Shielded Gate PowerTrench MOSFET 100V, 142A, 3.5mohm
auf Bestellung 1587 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 5.09 EUR |
| 10+ | 4.28 EUR |
| 25+ | 4.05 EUR |
| 100+ | 3.47 EUR |
| 250+ | 3.27 EUR |
| 500+ | 3.08 EUR |
| 1000+ | 2.64 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NTMFS3D2N10MDT1G onsemi
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc), Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V, Power Dissipation (Max): 2.8W (Ta), 155W (Tc), Vgs(th) (Max) @ Id: 4V @ 316µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V.
Weitere Produktangebote NTMFS3D2N10MDT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
NTMFS3D2N10MDT1G | Hersteller : onsemi |
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 316µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V |
auf Bestellung 1475 Stücke: Lieferzeit 10-14 Tag (e) |
|
 |
NTMFS3D2N10MDT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 100V 19A T/R |
Produkt ist nicht verfügbar |
|
|
|
NTMFS3D2N10MDT1G | Hersteller : onsemi |
Description: PTNG 100V LOW Q3.2MOHM N-FET, HE Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 142A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 50A, 10V Power Dissipation (Max): 2.8W (Ta), 155W (Tc) Vgs(th) (Max) @ Id: 4V @ 316µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 71.3 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 50 V |
Produkt ist nicht verfügbar |