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NTP5860NG

NTP5860NG onsemi

NTB5860N-D.PDF Hersteller: onsemi
Description: SINGLE N-CHANNEL POWER MOSFET 60
Packaging: Bulk
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 220A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V
Power Dissipation (Max): 283W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V
auf Bestellung 5791 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
135+3.94 EUR
Mindestbestellmenge: 135
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Technische Details NTP5860NG onsemi

Description: SINGLE N-CHANNEL POWER MOSFET 60, Packaging: Bulk, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 220A (Tc), Rds On (Max) @ Id, Vgs: 3mOhm @ 75A, 10V, Power Dissipation (Max): 283W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 180 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10760 pF @ 25 V.

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NTP5860NG Hersteller : ON Semiconductor NTB5860N-D-91784.pdf MOSFET NFET TO220 60V 2.5A 300
auf Bestellung 149 Stücke:
Lieferzeit 10-14 Tag (e)