NVB190N65S3F onsemi
Hersteller: onsemi
Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 650V 20A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V
Power Dissipation (Max): 162W (Tc)
Vgs(th) (Max) @ Id: 5V @ 430µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 627 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.23 EUR |
10+ | 5.23 EUR |
100+ | 4.23 EUR |
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Produktbewertung abgeben
Technische Details NVB190N65S3F onsemi
Description: MOSFET N-CH 650V 20A D2PAK-3, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Tc), Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V, Power Dissipation (Max): 162W (Tc), Vgs(th) (Max) @ Id: 5V @ 430µA, Supplier Device Package: TO-263 (D2Pak), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVB190N65S3F nach Preis ab 3.04 EUR bis 6.27 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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NVB190N65S3F | Hersteller : onsemi | MOSFET SUPERFET3 650V FRFET,190M |
auf Bestellung 4474 Stücke: Lieferzeit 10-14 Tag (e) |
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NVB190N65S3F | Hersteller : ONSEMI |
Description: ONSEMI - NVB190N65S3F - Leistungs-MOSFET, n-Kanal, 650 V, 20 A, 0.158 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85415000 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 162W Anzahl der Pins: 3Pin(s) productTraceability: No Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.158ohm |
auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
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NVB190N65S3F | Hersteller : ONSEMI |
Description: ONSEMI - NVB190N65S3F - Leistungs-MOSFET, n-Kanal, 650 V, 20 A, 0.158 ohm, TO-263 (D2PAK), Oberflächenmontage tariffCode: 85415000 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 20A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Verlustleistung Pd: 162W Gate-Source-Schwellenspannung, max.: 5V euEccn: NLR Verlustleistung: 162W Qualifizierungsstandard der Automobilindustrie: AEC-Q101 Anzahl der Pins: 3Pin(s) productTraceability: No Wandlerpolarität: n-Kanal Betriebswiderstand, Rds(on): 0.158ohm Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 150°C Drain-Source-Durchgangswiderstand: 0.158ohm |
auf Bestellung 1468 Stücke: Lieferzeit 14-21 Tag (e) |
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NVB190N65S3F | Hersteller : ON Semiconductor |
auf Bestellung 590 Stücke: Lieferzeit 21-28 Tag (e) |
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NVB190N65S3F | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 20A Automotive 3-Pin(2+Tab) D2PAK Reel |
Produkt ist nicht verfügbar |
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NVB190N65S3F | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 20A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Reel |
Produkt ist nicht verfügbar |
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NVB190N65S3F | Hersteller : ON Semiconductor | Trans MOSFET N-CH 650V 20A Automotive AEC-Q101 3-Pin(2+Tab) D2PAK Reel |
Produkt ist nicht verfügbar |
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NVB190N65S3F | Hersteller : onsemi |
Description: MOSFET N-CH 650V 20A D2PAK-3 Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 190mOhm @ 10A, 10V Power Dissipation (Max): 162W (Tc) Vgs(th) (Max) @ Id: 5V @ 430µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 400 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |