NVBG040N120SC1 onsemi
Hersteller: onsemiDescription: TRANS SJT N-CH 1200V 60A D2PAK-7
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 10mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 81600 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 800+ | 28.36 EUR |
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Technische Details NVBG040N120SC1 onsemi
Description: TRANS SJT N-CH 1200V 60A D2PAK-7, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 60A (Tc), Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V, Power Dissipation (Max): 357W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBG040N120SC1 nach Preis ab 28.56 EUR bis 62.8 EUR
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NVBG040N120SC1 | Hersteller : onsemi |
Description: TRANS SJT N-CH 1200V 60A D2PAK-7 Packaging: Cut Tape (CT) Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: SiCFET (Silicon Carbide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 60A (Tc) Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: D2PAK-7 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 20V Vgs (Max): +25V, -15V Drain to Source Voltage (Vdss): 1200 V Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1789 pF @ 800 V Qualification: AEC-Q101 |
auf Bestellung 81915 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | Hersteller : onsemi |
MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 40 mohm, 1200 V, M1, D2PAK-7L Silicon Carbide MOSFET, N?Channel, 1200 V, 40 m?, D2PAK?7L |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBG040N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 66 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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NVBG040N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive T/R |
auf Bestellung 800 Stücke: Lieferzeit 14-21 Tag (e) |
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| NVBG040N120SC1 | Hersteller : ON Semiconductor |
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auf Bestellung 135 Stücke: Lieferzeit 21-28 Tag (e) |
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NVBG040N120SC1 Produktcode: 179416 |
Transistoren > MOSFET N-CH |
Produkt ist nicht verfügbar
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NVBG040N120SC1 | Hersteller : ON Semiconductor |
Trans MOSFET N-CH SiC 1.2KV 60A Automotive AEC-Q101 8-Pin(7+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |