Produkte > ONSEMI > NVBG060N065SC1
NVBG060N065SC1

NVBG060N065SC1 onsemi

nvbg060n065sc1-d.pdf Hersteller: onsemi
Description: SIC MOS D2PAK-7L 650V
Packaging: Tape & Reel (TR)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 1600 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
800+19.42 EUR
Mindestbestellmenge: 800
Produktrezensionen
Produktbewertung abgeben

Technische Details NVBG060N065SC1 onsemi

Description: SIC MOS D2PAK-7L 650V, Packaging: Tape & Reel (TR), Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 46A (Tc), Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V, Power Dissipation (Max): 170W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 6.5mA, Supplier Device Package: D2PAK-7, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V, Qualification: AEC-Q101.

Weitere Produktangebote NVBG060N065SC1 nach Preis ab 15.15 EUR bis 28.12 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis ohne MwSt
NVBG060N065SC1 NVBG060N065SC1 Hersteller : onsemi NVBG060N065SC1_D-3150486.pdf MOSFET Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L Silicon Carbide (SiC) MOSFET - 44 mohm, 650 V, M2, D2PAK-7L
auf Bestellung 800 Stücke:
Lieferzeit 129-133 Tag (e)
Anzahl Preis ohne MwSt
1+21.93 EUR
10+ 19.32 EUR
25+ 18.81 EUR
50+ 17.76 EUR
100+ 16.72 EUR
250+ 16.19 EUR
500+ 15.15 EUR
NVBG060N065SC1 NVBG060N065SC1 Hersteller : onsemi nvbg060n065sc1-d.pdf Description: SIC MOS D2PAK-7L 650V
Packaging: Cut Tape (CT)
Package / Case: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 46A (Tc)
Rds On (Max) @ Id, Vgs: 70mOhm @ 20A, 18V
Power Dissipation (Max): 170W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 6.5mA
Supplier Device Package: D2PAK-7
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1473 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 2390 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+28.12 EUR
10+ 24.78 EUR
100+ 21.43 EUR
NVBG060N065SC1 Hersteller : ON Semiconductor nvbg060n065sc1-d.pdf NVBG060N065SC1
Produkt ist nicht verfügbar
NVBG060N065SC1 NVBG060N065SC1 Hersteller : ON Semiconductor nvbg060n065sc1-d.pdf Silicon Carbide MOSFET,44mohm,650V Automotive AEC-Q101
Produkt ist nicht verfügbar