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NVBGS1D2N08H ON Semiconductor


nvbgs1d2n08h-d.pdf Hersteller: ON Semiconductor
Power MOSFET Single N-Channel
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Technische Details NVBGS1D2N08H ON Semiconductor

Description: T8-80V IN SUZHOU D2PAK7L FOR AUT, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 290A (Tc), Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V, Power Dissipation (Max): 5.7W (Ta), 259W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 40 V.

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NVBGS1D2N08H NVBGS1D2N08H Hersteller : onsemi nvbgs1d2n08h-d.pdf Description: T8-80V IN SUZHOU D2PAK7L FOR AUT
Packaging: Tape & Reel (TR)
Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 290A (Tc)
Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V
Power Dissipation (Max): 5.7W (Ta), 259W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: D2PAK-7
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 40 V
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NVBGS1D2N08H NVBGS1D2N08H Hersteller : onsemi NVBGS1D2N08H_D-2492256.pdf MOSFET Power MOSFET, 80 V, 1.2 mohm, 353 A, Single N-Channel D2PAK-7L (Pb-Free)
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