Technische Details NVBGS1D2N08H ON Semiconductor
Description: T8-80V IN SUZHOU D2PAK7L FOR AUT, Packaging: Tape & Reel (TR), Package / Case: TO-263-7, D²Pak (6 Leads + Tab), Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 290A (Tc), Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V, Power Dissipation (Max): 5.7W (Ta), 259W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: D2PAK-7, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 40 V.
Weitere Produktangebote NVBGS1D2N08H
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVBGS1D2N08H | Hersteller : onsemi |
Description: T8-80V IN SUZHOU D2PAK7L FOR AUT Packaging: Tape & Reel (TR) Package / Case: TO-263-7, D²Pak (6 Leads + Tab) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43A (Ta), 290A (Tc) Rds On (Max) @ Id, Vgs: 1.34mOhm @ 50A, 10V Power Dissipation (Max): 5.7W (Ta), 259W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: D2PAK-7 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 160 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10830 pF @ 40 V |
Produkt ist nicht verfügbar |
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NVBGS1D2N08H | Hersteller : onsemi | MOSFET Power MOSFET, 80 V, 1.2 mohm, 353 A, Single N-Channel D2PAK-7L (Pb-Free) |
Produkt ist nicht verfügbar |