NVF3055L108T1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V
Power Dissipation (Max): 1.3W (Ta)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±15V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 38000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1000+ | 0.67 EUR |
2000+ | 0.63 EUR |
5000+ | 0.6 EUR |
10000+ | 0.57 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details NVF3055L108T1G onsemi
Description: ONSEMI - NVF3055L108T1G - Leistungs-MOSFET, n-Kanal, 60 V, 3 A, 0.092 ohm, SOT-223, Oberflächenmontage, tariffCode: 85412900, Transistormontage: Oberflächenmontage, Drain-Source-Spannung Vds: 60V, rohsCompliant: Y-EX, Dauer-Drainstrom Id: 3A, hazardous: false, rohsPhthalatesCompliant: YES, Qualifikation: AEC-Q101, MSL: MSL 1 - unbegrenzt, usEccn: EAR99, Gate-Source-Schwellenspannung, max.: 1.68V, euEccn: NLR, Verlustleistung: 2.1W, Bauform - Transistor: SOT-223, Anzahl der Pins: 4Pin(s), Produktpalette: -, productTraceability: No, Kanaltyp: n-Kanal, Rds(on)-Prüfspannung: 5V, Betriebstemperatur, max.: 175°C, Drain-Source-Durchgangswiderstand: 0.092ohm, SVHC: Lead (14-Jun-2023).
Weitere Produktangebote NVF3055L108T1G nach Preis ab 0.6 EUR bis 1.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NVF3055L108T1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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NVF3055L108T1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
auf Bestellung 1995 Stücke: Lieferzeit 14-21 Tag (e) |
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NVF3055L108T1G | Hersteller : onsemi | MOSFET NFET 60V 3A 0.120R |
auf Bestellung 23783 Stücke: Lieferzeit 10-14 Tag (e) |
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NVF3055L108T1G | Hersteller : onsemi |
Description: MOSFET N-CH 60V 3A SOT223 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3A (Ta) Rds On (Max) @ Id, Vgs: 120mOhm @ 1.5A, 5V Power Dissipation (Max): 1.3W (Ta) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: SOT-223 (TO-261) Grade: Automotive Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V Vgs (Max): ±15V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V Qualification: AEC-Q101 |
auf Bestellung 38393 Stücke: Lieferzeit 10-14 Tag (e) |
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NVF3055L108T1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 1 Stücke |
auf Bestellung 261 Stücke: Lieferzeit 7-14 Tag (e) |
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NVF3055L108T1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 60V; 1.4A; 1.3W; SOT223 Type of transistor: N-MOSFET Polarisation: unipolar Drain-source voltage: 60V Drain current: 1.4A Power dissipation: 1.3W Case: SOT223 Gate-source voltage: ±15V On-state resistance: 0.12Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 261 Stücke: Lieferzeit 14-21 Tag (e) |
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NVF3055L108T1G | Hersteller : ONSEMI |
Description: ONSEMI - NVF3055L108T1G - Leistungs-MOSFET, n-Kanal, 60 V, 3 A, 0.092 ohm, SOT-223, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 60V rohsCompliant: Y-EX Dauer-Drainstrom Id: 3A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 MSL: MSL 1 - unbegrenzt usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 1.68V euEccn: NLR Verlustleistung: 2.1W Bauform - Transistor: SOT-223 Anzahl der Pins: 4Pin(s) Produktpalette: - productTraceability: No Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 5V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.092ohm SVHC: Lead (14-Jun-2023) |
auf Bestellung 4972 Stücke: Lieferzeit 14-21 Tag (e) |
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NVF3055L108T1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3A Automotive 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |
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NVF3055L108T1G | Hersteller : ON Semiconductor | Trans MOSFET N-CH 60V 3A Automotive AEC-Q101 4-Pin(3+Tab) SOT-223 T/R |
Produkt ist nicht verfügbar |