NVHL075N065SC1 onsemi
Hersteller: onsemi
Description: SILICON CARBIDE (SIC) MOSFET, NC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Qualification: AEC-Q101
Description: SILICON CARBIDE (SIC) MOSFET, NC
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiC (Silicon Carbide Junction Transistor)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V
Power Dissipation (Max): 148W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 15V, 18V
Vgs (Max): +22V, -8V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V
Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V
Qualification: AEC-Q101
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 19.43 EUR |
30+ | 15.73 EUR |
120+ | 14.8 EUR |
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Technische Details NVHL075N065SC1 onsemi
Description: SILICON CARBIDE (SIC) MOSFET, NC, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiC (Silicon Carbide Junction Transistor), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Tc), Rds On (Max) @ Id, Vgs: 85mOhm @ 15A, 18V, Power Dissipation (Max): 148W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 5mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 15V, 18V, Vgs (Max): +22V, -8V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 18 V, Input Capacitance (Ciss) (Max) @ Vds: 1196 pF @ 325 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL075N065SC1 nach Preis ab 22 EUR bis 33.18 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVHL075N065SC1 | Hersteller : onsemi | MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 57 mohm, 650 V, M2, TO247-3L SiC MOSFET, 650V, 57mohm, 38A |
auf Bestellung 412 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL075N065SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NVHL075N065SC1 - Siliziumkarbid-MOSFET, Eins, n-Kanal, 38 A, 650 V, 0.085 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 650V rohsCompliant: Y-EX Dauer-Drainstrom Id: 38A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 4.3V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 148W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 18V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.085ohm SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 450 Stücke: Lieferzeit 14-21 Tag (e) |
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NVHL075N065SC1 | Hersteller : ON Semiconductor | SiC Power MOSFET, N Channel Automotive AEC-Q101 |
Produkt ist nicht verfügbar |
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NVHL075N065SC1 | Hersteller : ON Semiconductor | SiC Power MOSFET, N Channel Automotive AEC-Q101 |
Produkt ist nicht verfügbar |