NVHL160N120SC1 onsemi
Hersteller: onsemi
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
Description: SICFET N-CH 1200V 17A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: SiCFET (Silicon Carbide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
Power Dissipation (Max): 119W (Tc)
Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
Supplier Device Package: TO-247-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 20V
Vgs (Max): +25V, -15V
Drain to Source Voltage (Vdss): 1200 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
Qualification: AEC-Q101
auf Bestellung 4050 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
2+ | 17.27 EUR |
30+ | 13.99 EUR |
120+ | 13.16 EUR |
510+ | 11.93 EUR |
1020+ | 10.94 EUR |
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Technische Details NVHL160N120SC1 onsemi
Description: SICFET N-CH 1200V 17A TO247-3, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: SiCFET (Silicon Carbide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 17A (Tc), Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V, Power Dissipation (Max): 119W (Tc), Vgs(th) (Max) @ Id: 4.3V @ 2.5mA, Supplier Device Package: TO-247-3, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 20V, Vgs (Max): +25V, -15V, Drain to Source Voltage (Vdss): 1200 V, Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V, Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V, Qualification: AEC-Q101.
Weitere Produktangebote NVHL160N120SC1 nach Preis ab 11.51 EUR bis 17.41 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||||
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NVHL160N120SC1 | Hersteller : onsemi | MOSFET Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 160 mohm, 1200 V, M1, TO247-3L Silicon Carbide MOSFET, N?Channel, 1200 V, 160 m?, TO247?3L |
auf Bestellung 2646 Stücke: Lieferzeit 10-14 Tag (e) |
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NVHL160N120SC1 | Hersteller : ONSEMI |
Description: ONSEMI - NVHL160N120SC1 - Siliziumkarbid-MOSFET, EliteSiC, Eins, n-Kanal, 17 A, 1.2 kV, 0.162 ohm, TO-247 tariffCode: 85412900 Drain-Source-Spannung Vds: 1.2kV rohsCompliant: Y-EX Dauer-Drainstrom Id: 17A hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 3.1V MOSFET-Modul-Konfiguration: Eins euEccn: NLR Verlustleistung: 119W Bauform - Transistor: TO-247 Anzahl der Pins: 3Pin(s) productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 20V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.162ohm |
auf Bestellung 1348 Stücke: Lieferzeit 14-21 Tag (e) |
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NVHL160N120SC1 | Hersteller : ON Semiconductor |
auf Bestellung 410 Stücke: Lieferzeit 21-28 Tag (e) |
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NVHL160N120SC1 | Hersteller : ON Semiconductor | Trans MOSFET N-CH SiC 1.2KV 17A Automotive 3-Pin(3+Tab) TO-247 Tube |
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