NVJD5121NT1G onsemi
Hersteller: onsemiDescription: MOSFET 2N-CH 60V 0.295A SC88
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 295mA
Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V
Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V
Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.14 EUR |
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Technische Details NVJD5121NT1G onsemi
Description: MOSFET 2N-CH 60V 0.295A SC88, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 295mA, Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V, Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V, Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V, Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: SC-88/SC70-6/SOT-363, Part Status: Active.
Weitere Produktangebote NVJD5121NT1G nach Preis ab 0.11 EUR bis 0.63 EUR
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NVJD5121NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced Anzahl je Verpackung: 5 Stücke |
auf Bestellung 210 Stücke: Lieferzeit 7-14 Tag (e) |
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NVJD5121NT1G | Hersteller : ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 0.212A; 0.25W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 0.212A Power dissipation: 0.25W Case: SC70-6; SC88; SOT363 Gate-source voltage: ±20V On-state resistance: 1.6Ω Mounting: SMD Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 210 Stücke: Lieferzeit 14-21 Tag (e) |
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NVJD5121NT1G | Hersteller : onsemi |
MOSFET NFET SC88 60V 295MA 1.6OH |
auf Bestellung 49320 Stücke: Lieferzeit 10-14 Tag (e) |
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NVJD5121NT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 60V 0.295A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 295mA Input Capacitance (Ciss) (Max) @ Vds: 26pF @ 20V Rds On (Max) @ Id, Vgs: 1.6Ohm @ 500mA, 10V Gate Charge (Qg) (Max) @ Vgs: 0.9nC @ 4.5V Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active |
auf Bestellung 17565 Stücke: Lieferzeit 10-14 Tag (e) |
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