NVLJS053N12MCLTAG onsemi
Hersteller: onsemi
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta)
Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V
Power Dissipation (Max): 620mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 30µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V
auf Bestellung 2850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.2 EUR |
17+ | 1.04 EUR |
100+ | 0.72 EUR |
500+ | 0.6 EUR |
1000+ | 0.51 EUR |
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Technische Details NVLJS053N12MCLTAG onsemi
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0, Packaging: Tape & Reel (TR), Package / Case: 6-UDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta), Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V, Power Dissipation (Max): 620mW (Ta), Vgs(th) (Max) @ Id: 3V @ 30µA, Supplier Device Package: 6-UDFN (2x2), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 120 V, Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V.
Weitere Produktangebote NVLJS053N12MCLTAG nach Preis ab 0.45 EUR bis 1.26 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
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NVLJS053N12MCLTAG | Hersteller : onsemi | MOSFET PTNG 120V LL NCH IN UDFN 2.0X2.0 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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Produkt ist nicht verfügbar |
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NVLJS053N12MCLTAG | Hersteller : ON Semiconductor | Power MOSFET, Single N-Channel Automotive AEC-Q101 |
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NVLJS053N12MCLTAG | Hersteller : onsemi |
Description: PTNG 120V LL NCH IN UDFN 2.0X2.0 Packaging: Tape & Reel (TR) Package / Case: 6-UDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.8A (Ta) Rds On (Max) @ Id, Vgs: 53mOhm @ 5.2A, 10V Power Dissipation (Max): 620mW (Ta) Vgs(th) (Max) @ Id: 3V @ 30µA Supplier Device Package: 6-UDFN (2x2) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 7.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 60 V |
Produkt ist nicht verfügbar |