auf Bestellung 2995 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 3.27 EUR |
| 10+ | 2.73 EUR |
| 100+ | 2.18 EUR |
| 500+ | 1.85 EUR |
| 1000+ | 1.56 EUR |
| 1500+ | 1.48 EUR |
| 3000+ | 1.4 EUR |
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Technische Details NVMFD6H846NLT1G onsemi
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 34W (Tc), Drain to Source Voltage (Vdss): 80V, Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V, Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V, Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V, Vgs(th) (Max) @ Id: 2V @ 21µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFD6H846NLT1G
| Foto | Bezeichnung | Hersteller | Beschreibung |
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| NVMFD6H846NLT1G | Hersteller : ON Semiconductor |
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auf Bestellung 1490 Stücke: Lieferzeit 21-28 Tag (e) |
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NVMFD6H846NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVMFD6H846NLT1G | Hersteller : onsemi |
Description: MOSFET 2N-CH 80V 9.4A/31A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 34W (Tc) Drain to Source Voltage (Vdss): 80V Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta), 31A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 900pF @ 40V Rds On (Max) @ Id, Vgs: 15mOhm @ 5A, 10V Gate Charge (Qg) (Max) @ Vgs: 17nC @ 10V Vgs(th) (Max) @ Id: 2V @ 21µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |