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NVMFS5C406NT1G

NVMFS5C406NT1G ON Semiconductor

NVMFS5C406N-D-1509426.pdf Hersteller: ON Semiconductor
MOSFET T6 40V SG NCH SO8FL HEFET
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Technische Details NVMFS5C406NT1G ON Semiconductor

Description: MOSFET N-CH 40V 52A/353A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc), Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V, Power Dissipation (Max): 3.9W (Ta), 179W (Tc), Vgs(th) (Max) @ Id: 4V @ 280µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V.

Weitere Produktangebote NVMFS5C406NT1G nach Preis ab 5.51 EUR bis 8.11 EUR

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NVMFS5C406NT1G Hersteller : onsemi nvmfs5c406n-d.pdf Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
auf Bestellung 190 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+8.11 EUR
10+ 6.81 EUR
100+ 5.51 EUR
Mindestbestellmenge: 3
NVMFS5C406NT1G Hersteller : ON Semiconductor nvmfs5c406n-d.pdf
auf Bestellung 2850 Stücke:
Lieferzeit 21-28 Tag (e)
NVMFS5C406NT1G Hersteller : onsemi nvmfs5c406n-d.pdf Description: MOSFET N-CH 40V 52A/353A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 353A (Tc)
Rds On (Max) @ Id, Vgs: 0.8mOhm @ 50A, 10V
Power Dissipation (Max): 3.9W (Ta), 179W (Tc)
Vgs(th) (Max) @ Id: 4V @ 280µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7288 pF @ 20 V
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