NVMFS5C430NLAFT1G onsemi
Hersteller: onsemiDescription: MOSFET N-CH 40V 38A/200A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V
Power Dissipation (Max): 3.8W (Ta), 110W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 145500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1500+ | 2.04 EUR |
| 3000+ | 1.94 EUR |
| 7500+ | 1.86 EUR |
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Technische Details NVMFS5C430NLAFT1G onsemi
Description: MOSFET N-CH 40V 38A/200A 5DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, 5 Leads, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc), Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V, Power Dissipation (Max): 3.8W (Ta), 110W (Tc), Vgs(th) (Max) @ Id: 2V @ 250µA, Supplier Device Package: 5-DFN (5x6) (8-SOFL), Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 40 V, Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote NVMFS5C430NLAFT1G nach Preis ab 1.95 EUR bis 4.31 EUR
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NVMFS5C430NLAFT1G | Hersteller : onsemi |
Description: MOSFET N-CH 40V 38A/200A 5DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Ta), 200A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 50A, 10V Power Dissipation (Max): 3.8W (Ta), 110W (Tc) Vgs(th) (Max) @ Id: 2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 70 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4300 pF @ 20 V Qualification: AEC-Q101 |
auf Bestellung 145960 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C430NLAFT1G | Hersteller : onsemi |
MOSFET T6 40V NCH LL IN SO8FL |
auf Bestellung 1235 Stücke: Lieferzeit 10-14 Tag (e) |
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NVMFS5C430NLAFT1G | Hersteller : ONSEMI |
Description: ONSEMI - NVMFS5C430NLAFT1G - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 0.0012 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm |
auf Bestellung 1230 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C430NLAFT1G | Hersteller : ONSEMI |
Description: ONSEMI - NVMFS5C430NLAFT1G - Leistungs-MOSFET, n-Kanal, 40 V, 200 A, 0.0012 ohm, DFN, Oberflächenmontage tariffCode: 85412900 Transistormontage: Oberflächenmontage Drain-Source-Spannung Vds: 40V rohsCompliant: Y-EX Dauer-Drainstrom Id: 200A hazardous: false rohsPhthalatesCompliant: YES Qualifikation: AEC-Q101 usEccn: EAR99 Gate-Source-Schwellenspannung, max.: 2V euEccn: NLR Verlustleistung: 110W Bauform - Transistor: DFN Anzahl der Pins: 5Pin(s) Produktpalette: - productTraceability: Yes-Date/Lot Code Kanaltyp: n-Kanal Rds(on)-Prüfspannung: 10V Betriebstemperatur, max.: 175°C Drain-Source-Durchgangswiderstand: 0.0012ohm |
auf Bestellung 1230 Stücke: Lieferzeit 14-21 Tag (e) |
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NVMFS5C430NLAFT1G | Hersteller : ON Semiconductor |
Trans MOSFET N-CH 40V 38A Automotive 5-Pin(4+Tab) SO-FL T/R |
Produkt ist nicht verfügbar |
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NVMFS5C430NLAFT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6 Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Power dissipation: 53W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.4mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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NVMFS5C430NLAFT1G | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 40V; 140A; Idm: 900A; 53W; DFN5x6 Mounting: SMD Case: DFN5x6 Kind of package: reel; tape Power dissipation: 53W Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 1.4mΩ Drain current: 140A Drain-source voltage: 40V Gate charge: 32nC Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 900A |
Produkt ist nicht verfügbar |