NXH040F120MNF1PTG onsemi
auf Bestellung 56 Stücke:
Lieferzeit 1150-1154 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 185.4 EUR |
| 10+ | 169.26 EUR |
| 28+ | 161.48 EUR |
| 56+ | 157.92 EUR |
| 112+ | 154 EUR |
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Technische Details NXH040F120MNF1PTG onsemi
Description: SIC 4N-CH 1200V 30A 22PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Configuration: 4 N-Channel, Operating Temperature: -40°C ~ 175°C (TJ), Technology: Silicon Carbide (SiC), Power - Max: 74W (Tj), Drain to Source Voltage (Vdss): 1200V (1.2kV), Current - Continuous Drain (Id) @ 25°C: 30A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V, Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V, Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V, Vgs(th) (Max) @ Id: 4.3V @ 10mA, Supplier Device Package: 22-PIM (33.8x42.5).
Weitere Produktangebote NXH040F120MNF1PTG
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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NXH040F120MNF1PTG | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH SiC 1.2KV 30A Tray |
Produkt ist nicht verfügbar |
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| NXH040F120MNF1PTG | Hersteller : onsemi |
Description: SIC 4N-CH 1200V 30A 22PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Configuration: 4 N-Channel Operating Temperature: -40°C ~ 175°C (TJ) Technology: Silicon Carbide (SiC) Power - Max: 74W (Tj) Drain to Source Voltage (Vdss): 1200V (1.2kV) Current - Continuous Drain (Id) @ 25°C: 30A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 1505pF @ 800V Rds On (Max) @ Id, Vgs: 56mOhm @ 25A, 20V Gate Charge (Qg) (Max) @ Vgs: 122.1nC @ 20V Vgs(th) (Max) @ Id: 4.3V @ 10mA Supplier Device Package: 22-PIM (33.8x42.5) |
Produkt ist nicht verfügbar |