NXH100B120H3Q0PTG onsemi
Hersteller: onsemiIGBT Modules Power Integrated Module, Dual Boost, 1200 V, 50 A IGBT + 1200 V, 20 A SiC Diode. 1.6mm press-fit pins, TIM
auf Bestellung 28 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 137.86 EUR |
| 10+ | 132.26 EUR |
| 24+ | 122.39 EUR |
| 48+ | 116.71 EUR |
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Technische Details NXH100B120H3Q0PTG onsemi
Description: IGBT MODULE 1200V 50A 186W 22PIM, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: 2 Independent, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A, NTC Thermistor: No, Supplier Device Package: 22-PIM (55x32.5), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 50 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 186 W, Current - Collector Cutoff (Max): 200 µA, Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V.
Weitere Produktangebote NXH100B120H3Q0PTG nach Preis ab 115.21 EUR bis 139.52 EUR
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NXH100B120H3Q0PTG | Hersteller : onsemi |
Description: IGBT MODULE 1200V 50A 186W 22PIM Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: 2 Independent Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A NTC Thermistor: No Supplier Device Package: 22-PIM (55x32.5) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 50 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 186 W Current - Collector Cutoff (Max): 200 µA Input Capacitance (Cies) @ Vce: 9.075 nF @ 20 V |
auf Bestellung 262 Stücke: Lieferzeit 10-14 Tag (e) |
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