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NXH160T120L2Q2F2S1G

NXH160T120L2Q2F2S1G onsemi


nxh160t120l2q2f2s1-d.pdf Hersteller: onsemi
Description: PIM POWER MODULE
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 160A
NTC Thermistor: Yes
Supplier Device Package: 56-PIM/Q2PACK (93x47)
Part Status: Active
Current - Collector (Ic) (Max): 181 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Power - Max: 500 W
Current - Collector Cutoff (Max): 500 µA
Input Capacitance (Cies) @ Vce: 38.8 nF @ 25 V
auf Bestellung 36 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+242.32 EUR
12+ 224.3 EUR
36+ 216.12 EUR
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Technische Details NXH160T120L2Q2F2S1G onsemi

Description: PIM POWER MODULE, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.7V @ 15V, 160A, NTC Thermistor: Yes, Supplier Device Package: 56-PIM/Q2PACK (93x47), Part Status: Active, Current - Collector (Ic) (Max): 181 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 500 W, Current - Collector Cutoff (Max): 500 µA, Input Capacitance (Cies) @ Vce: 38.8 nF @ 25 V.

Weitere Produktangebote NXH160T120L2Q2F2S1G nach Preis ab 217.66 EUR bis 244.06 EUR

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NXH160T120L2Q2F2S1G Hersteller : onsemi NXH160T120L2Q2F2S1_D-2319873.pdf IGBT Modules Power Integrated Module (PIM), IGBT 1200 V, 160 A and 650 V, 100 A
auf Bestellung 36 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
1+244.06 EUR
10+ 225.95 EUR
25+ 225.9 EUR
36+ 217.69 EUR
108+ 217.68 EUR
504+ 217.66 EUR
NXH160T120L2Q2F2S1G Hersteller : ON Semiconductor nxh160t120l2q2f2s1-d.pdf Power IGBT Module Transistor
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