NXH240B120H3Q1PG-R onsemi
auf Bestellung 21 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 234.61 EUR |
| 10+ | 217.17 EUR |
| 21+ | 209.25 EUR |
| 42+ | 204.04 EUR |
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Technische Details NXH240B120H3Q1PG-R onsemi
Description: PIM Q1 3 CHANNEL IGBT+SIC BOOST, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A, NTC Thermistor: Yes, Supplier Device Package: 32-PIM (71x37.4), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 68 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Power - Max: 158 W, Current - Collector Cutoff (Max): 400 µA, Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V.
Weitere Produktangebote NXH240B120H3Q1PG-R nach Preis ab 210.68 EUR bis 236.23 EUR
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NXH240B120H3Q1PG-R | Hersteller : onsemi |
 Description: PIM Q1 3 CHANNEL IGBT+SIC BOOSTPackaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Three Level Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 80A NTC Thermistor: Yes Supplier Device Package: 32-PIM (71x37.4) IGBT Type: Trench Field Stop Current - Collector (Ic) (Max): 68 A Voltage - Collector Emitter Breakdown (Max): 1200 V Power - Max: 158 W Current - Collector Cutoff (Max): 400 µA Input Capacitance (Cies) @ Vce: 18.151 nF @ 20 V |
auf Bestellung 4536 Stücke: Lieferzeit 10-14 Tag (e) |
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