NXH450B100H4Q2F2PG-R onsemi
Hersteller: onsemi
IGBT Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS
IGBT Modules 1000V,75A FSIII IGBT, MID SPEED WITH RUGGED ANTI-PARALLEL DIODES IN PRESS FIT PINS
auf Bestellung 36 Stücke:
Lieferzeit 115-119 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
1+ | 443.71 EUR |
10+ | 415.61 EUR |
25+ | 402.23 EUR |
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Technische Details NXH450B100H4Q2F2PG-R onsemi
Description: 1000V75A FSIII IGBT MID SPEED WI, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Half Bridge Inverter, Operating Temperature: -40°C ~ 150°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A, NTC Thermistor: Yes, Supplier Device Package: 56-PIM (93x47), Current - Collector (Ic) (Max): 101 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 234 W, Current - Collector Cutoff (Max): 600 µA, Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V.
Weitere Produktangebote NXH450B100H4Q2F2PG-R nach Preis ab 397.09 EUR bis 440.53 EUR
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NXH450B100H4Q2F2PG-R | Hersteller : onsemi |
Description: 1000V75A FSIII IGBT MID SPEED WI Packaging: Tray Package / Case: Module Mounting Type: Chassis Mount Input: Standard Configuration: Half Bridge Inverter Operating Temperature: -40°C ~ 150°C (TJ) Vce(on) (Max) @ Vge, Ic: 2.25V @ 15V, 150A NTC Thermistor: Yes Supplier Device Package: 56-PIM (93x47) Current - Collector (Ic) (Max): 101 A Voltage - Collector Emitter Breakdown (Max): 1000 V Power - Max: 234 W Current - Collector Cutoff (Max): 600 µA Input Capacitance (Cies) @ Vce: 9.342 nF @ 20 V |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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