NXH600B100H4Q2F2SG onsemi
Hersteller: onsemiDescription: MASS MARKET GEN3 Q2BOOST
Packaging: Tray
Package / Case: Module
Mounting Type: Chassis Mount
Input: Standard
Configuration: Three Level Inverter
Operating Temperature: -40°C ~ 175°C (TJ)
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A
NTC Thermistor: Yes
Supplier Device Package: 44-PIM (93x47)
IGBT Type: Trench Field Stop
Current - Collector (Ic) (Max): 192 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Power - Max: 511 W
Current - Collector Cutoff (Max): 10 µA
Input Capacitance (Cies) @ Vce: 13.256 nF @ 20 V
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 422.73 EUR |
| 10+ | 395.95 EUR |
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Technische Details NXH600B100H4Q2F2SG onsemi
Description: MASS MARKET GEN3 Q2BOOST, Packaging: Tray, Package / Case: Module, Mounting Type: Chassis Mount, Input: Standard, Configuration: Three Level Inverter, Operating Temperature: -40°C ~ 175°C (TJ), Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 200A, NTC Thermistor: Yes, Supplier Device Package: 44-PIM (93x47), IGBT Type: Trench Field Stop, Current - Collector (Ic) (Max): 192 A, Voltage - Collector Emitter Breakdown (Max): 1000 V, Power - Max: 511 W, Current - Collector Cutoff (Max): 10 µA, Input Capacitance (Cies) @ Vce: 13.256 nF @ 20 V.
Weitere Produktangebote NXH600B100H4Q2F2SG nach Preis ab 386 EUR bis 425.81 EUR
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NXH600B100H4Q2F2SG | Hersteller : onsemi |
IGBT Modules Si/SiC Hybrid Modules, 3 Channel Symmetric Boost 1000 V, 200 A IGBT, 1200 V, 60 A SiC Diode Solder pins |
auf Bestellung 36 Stücke: Lieferzeit 10-14 Tag (e) |
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