P32FG15SL-5071 SHINDENGEN
Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 150V; 32A; Idm: 96A; 100W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 32A
Pulsed drain current: 96A
Power dissipation: 100W
Case: FG (TO263AB)
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 150V; 32A; Idm: 96A; 100W
Type of transistor: N-MOSFET
Technology: EETMOS3
Polarisation: unipolar
Drain-source voltage: 150V
Drain current: 32A
Pulsed drain current: 96A
Power dissipation: 100W
Case: FG (TO263AB)
Gate-source voltage: ±20V
On-state resistance: 40mΩ
Mounting: SMD
Gate charge: 72nC
Kind of package: reel; tape
Kind of channel: enhanced
Anzahl je Verpackung: 1 Stücke
auf Bestellung 1000 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
51+ | 1.41 EUR |
57+ | 1.27 EUR |
74+ | 0.97 EUR |
78+ | 0.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details P32FG15SL-5071 SHINDENGEN
Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 150V; 32A; Idm: 96A; 100W, Type of transistor: N-MOSFET, Technology: EETMOS3, Polarisation: unipolar, Drain-source voltage: 150V, Drain current: 32A, Pulsed drain current: 96A, Power dissipation: 100W, Case: FG (TO263AB), Gate-source voltage: ±20V, On-state resistance: 40mΩ, Mounting: SMD, Gate charge: 72nC, Kind of package: reel; tape, Kind of channel: enhanced, Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P32FG15SL-5071 nach Preis ab 0.92 EUR bis 1.41 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P32FG15SL-5071 | Hersteller : SHINDENGEN |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 150V; 32A; Idm: 96A; 100W Type of transistor: N-MOSFET Technology: EETMOS3 Polarisation: unipolar Drain-source voltage: 150V Drain current: 32A Pulsed drain current: 96A Power dissipation: 100W Case: FG (TO263AB) Gate-source voltage: ±20V On-state resistance: 40mΩ Mounting: SMD Gate charge: 72nC Kind of package: reel; tape Kind of channel: enhanced |
auf Bestellung 1000 Stücke: Lieferzeit 14-21 Tag (e) |
|