P40F12SN-5600 SHINDENGEN
Hersteller: SHINDENGEN
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W
Mounting: THT
Drain-source voltage: 120V
Drain current: 40A
On-state resistance: 11.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 117nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
Anzahl je Verpackung: 1 Stücke
Category: THT N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W
Mounting: THT
Drain-source voltage: 120V
Drain current: 40A
On-state resistance: 11.9mΩ
Type of transistor: N-MOSFET
Power dissipation: 51W
Polarisation: unipolar
Kind of package: bulk
Gate charge: 117nC
Technology: EETMOS3
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 160A
Case: FTO-220AG (SC91)
Anzahl je Verpackung: 1 Stücke
auf Bestellung 84 Stücke:
Lieferzeit 7-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
40+ | 1.8 EUR |
44+ | 1.63 EUR |
59+ | 1.23 EUR |
62+ | 1.16 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details P40F12SN-5600 SHINDENGEN
Category: THT N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W, Mounting: THT, Drain-source voltage: 120V, Drain current: 40A, On-state resistance: 11.9mΩ, Type of transistor: N-MOSFET, Power dissipation: 51W, Polarisation: unipolar, Kind of package: bulk, Gate charge: 117nC, Technology: EETMOS3, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 160A, Case: FTO-220AG (SC91), Anzahl je Verpackung: 1 Stücke.
Weitere Produktangebote P40F12SN-5600 nach Preis ab 1.16 EUR bis 1.8 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||
---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
P40F12SN-5600 | Hersteller : SHINDENGEN |
Category: THT N channel transistors Description: Transistor: N-MOSFET; EETMOS3; unipolar; 120V; 40A; Idm: 160A; 51W Mounting: THT Drain-source voltage: 120V Drain current: 40A On-state resistance: 11.9mΩ Type of transistor: N-MOSFET Power dissipation: 51W Polarisation: unipolar Kind of package: bulk Gate charge: 117nC Technology: EETMOS3 Kind of channel: enhanced Gate-source voltage: ±20V Pulsed drain current: 160A Case: FTO-220AG (SC91) |
auf Bestellung 84 Stücke: Lieferzeit 14-21 Tag (e) |
|
|||||||||||
P40F12SN-5600 | Hersteller : Shindengen | MOSFET EETMOS series Power MOSFET Through Hole |
Produkt ist nicht verfügbar |