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P56LA4SN-5070 SHINDENGEN


_Shindengen Catalogue 2020.pdf Hersteller: SHINDENGEN
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Technology: EETMOS3
Drain-source voltage: 40V
Drain current: 56A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 168A
Anzahl je Verpackung: 1 Stücke
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Technische Details P56LA4SN-5070 SHINDENGEN

Category: SMD N channel transistors, Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA, Case: LA, Mounting: SMD, Kind of package: reel; tape, Technology: EETMOS3, Drain-source voltage: 40V, Drain current: 56A, On-state resistance: 5.7mΩ, Type of transistor: N-MOSFET, Power dissipation: 99W, Polarisation: unipolar, Gate charge: 38nC, Kind of channel: enhanced, Gate-source voltage: ±20V, Pulsed drain current: 168A, Anzahl je Verpackung: 1 Stücke.

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P56LA4SN-5070 Hersteller : SHINDENGEN _Shindengen Catalogue 2020.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; EETMOS3; unipolar; 40V; 56A; Idm: 168A; 99W; LA
Case: LA
Mounting: SMD
Kind of package: reel; tape
Technology: EETMOS3
Drain-source voltage: 40V
Drain current: 56A
On-state resistance: 5.7mΩ
Type of transistor: N-MOSFET
Power dissipation: 99W
Polarisation: unipolar
Gate charge: 38nC
Kind of channel: enhanced
Gate-source voltage: ±20V
Pulsed drain current: 168A
Produkt ist nicht verfügbar