PDTA124EMB,315 NXP
Hersteller: NXP
Description: NXP - PDTA124EMB,315 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: NXP - PDTA124EMB,315 - SCHOTTKY RECTIFIER DIODES
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
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Technische Details PDTA124EMB,315 NXP
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN, Packaging: Tape & Reel (TR), Package / Case: 3-XFDFN, Mounting Type: Surface Mount, Transistor Type: PNP - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA, Current - Collector Cutoff (Max): 100nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V, Supplier Device Package: DFN1006B-3, Grade: Automotive, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 250 mW, Frequency - Transition: 180 MHz, Resistor - Base (R1): 22 kOhms, Resistor - Emitter Base (R2): 22 kOhms, Qualification: AEC-Q100.
Weitere Produktangebote PDTA124EMB,315
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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PDTA124EMB,315 | Hersteller : NEXPERIA |
Description: NEXPERIA - PDTA124EMB,315 - SCHOTTKY RECTIFIER DIODES tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 90000 Stücke: Lieferzeit 14-21 Tag (e) |
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PDTA124EMB,315 | Hersteller : Nexperia USA Inc. |
Description: TRANS PREBIAS PNP 50V 0.1A 3DFN Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Transistor Type: PNP - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 150mV @ 500µA, 10mA Current - Collector Cutoff (Max): 100nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 5V Supplier Device Package: DFN1006B-3 Grade: Automotive Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 250 mW Frequency - Transition: 180 MHz Resistor - Base (R1): 22 kOhms Resistor - Emitter Base (R2): 22 kOhms Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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PDTA124EMB,315 | Hersteller : Nexperia | Bipolar Transistors - Pre-Biased PDTA124EMB/SOT883B/XQFN3 |
Produkt ist nicht verfügbar |