PJC7400_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.Description: SOT-323, MOSFET
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta)
Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: SOT-323
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V
auf Bestellung 162000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.11 EUR |
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Technische Details PJC7400_R1_00001 Panjit International Inc.
Description: SOT-323, MOSFET, Packaging: Tape & Reel (TR), Package / Case: SC-70, SOT-323, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta), Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V, Power Dissipation (Max): 350mW (Ta), Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: SOT-323, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V, Vgs (Max): ±12V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V.
Weitere Produktangebote PJC7400_R1_00001 nach Preis ab 0.089 EUR bis 0.69 EUR
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PJC7400_R1_00001 | Hersteller : Panjit International Inc. |
Description: SOT-323, MOSFET Packaging: Cut Tape (CT) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.9A (Ta) Rds On (Max) @ Id, Vgs: 70mOhm @ 1.9A, 10V Power Dissipation (Max): 350mW (Ta) Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: SOT-323 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.8V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 4.8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 447 pF @ 15 V |
auf Bestellung 11583 Stücke: Lieferzeit 10-14 Tag (e) |
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PJC7400_R1_00001 | Hersteller : Panjit |
MOSFET 30V N-Channel Enhancement Mode MOSFET |
auf Bestellung 44684 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJC7400_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Type of transistor: N-MOSFET Case: SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.35W On-state resistance: 0.11Ω Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.9A Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 7.6A Anzahl je Verpackung: 5 Stücke |
auf Bestellung 6000 Stücke: Lieferzeit 7-14 Tag (e) |
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| PJC7400_R1_00001 | Hersteller : PanJit Semiconductor |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 1.9A; Idm: 7.6A; 350mW; SOT323 Type of transistor: N-MOSFET Case: SOT323 Mounting: SMD Kind of package: reel; tape Power dissipation: 0.35W On-state resistance: 0.11Ω Polarisation: unipolar Drain-source voltage: 30V Drain current: 1.9A Gate charge: 4.8nC Kind of channel: enhanced Gate-source voltage: ±12V Pulsed drain current: 7.6A |
auf Bestellung 6000 Stücke: Lieferzeit 14-21 Tag (e) |
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