PJQ1820_R1_00001 Panjit International Inc.
Hersteller: Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010-6L
Description: MOSFET 2N-CH 20V 0.8A 6DFN
Packaging: Tape & Reel (TR)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 400mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 800mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V
Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: DFN1010-6L
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Technische Details PJQ1820_R1_00001 Panjit International Inc.
Description: MOSFET 2N-CH 20V 0.8A 6DFN, Packaging: Tape & Reel (TR), Package / Case: 6-UFDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 150°C (TJ), Power - Max: 400mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 800mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 46pF @ 10V, Rds On (Max) @ Id, Vgs: 300mOhm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.1nC @ 4.5V, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: DFN1010-6L.
Weitere Produktangebote PJQ1820_R1_00001
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
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PJQ1820_R1_00001 | Hersteller : Panjit |
 MOSFET /820/TR/7"/HF/5K/DFN1010-6L/MOS/DFN/NFET-20F1MN//PJ/DFN10106L-AS02/PJQ1820-ASV3/DFN10106L-AS01 |
Produkt ist nicht verfügbar |