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PJQ2405_R1_00001

PJQ2405_R1_00001 Panjit International Inc.

PJQ2405.pdf Hersteller: Panjit International Inc.
Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020B-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
auf Bestellung 2300 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
19+0.95 EUR
22+ 0.83 EUR
100+ 0.57 EUR
500+ 0.48 EUR
1000+ 0.41 EUR
Mindestbestellmenge: 19
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Technische Details PJQ2405_R1_00001 Panjit International Inc.

Description: 20V P-CHANNEL ENHANCEMENT MODE M, Packaging: Tape & Reel (TR), Package / Case: 6-WDFN Exposed Pad, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta), Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V, Power Dissipation (Max): 2.8W (Ta), Vgs(th) (Max) @ Id: 900mV @ 250µA, Supplier Device Package: DFN2020B-6, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Vgs (Max): ±8V, Drain to Source Voltage (Vdss): 20 V, Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V, Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V.

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PJQ2405_R1_00001 PJQ2405_R1_00001 Hersteller : Panjit PJQ2405-1867433.pdf MOSFET 20V P-Channel Enhancement Mode MOSFET
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3+0.97 EUR
10+ 0.84 EUR
100+ 0.58 EUR
500+ 0.48 EUR
1000+ 0.42 EUR
3000+ 0.36 EUR
6000+ 0.34 EUR
Mindestbestellmenge: 3
PJQ2405_R1_00001 PJQ2405_R1_00001 Hersteller : Panjit International Inc. PJQ2405.pdf Description: 20V P-CHANNEL ENHANCEMENT MODE M
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 7.2A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.2A, 4.5V
Power Dissipation (Max): 2.8W (Ta)
Vgs(th) (Max) @ Id: 900mV @ 250µA
Supplier Device Package: DFN2020B-6
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1785 pF @ 10 V
Produkt ist nicht verfügbar
PJQ2405-R1-00001 Hersteller : Panjit MOSFET DFN2020B-6L/MOS/NFET-20FIMP
Produkt ist nicht verfügbar