PJQ5948V-AU_R2_002A1 Panjit International Inc.
Hersteller: Panjit International Inc.Description: MOSFET 2N-CH 40V 10.5A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.4W (Ta), 32W (Tc)
Drain to Source Voltage (Vdss): 40V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V
Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V
FET Feature: Standard
Vgs(th) (Max) @ Id: 3.5V @ 50µA
Supplier Device Package: DFN5060B-8
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 3000+ | 0.8 EUR |
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Technische Details PJQ5948V-AU_R2_002A1 Panjit International Inc.
Description: MOSFET 2N-CH 40V 10.5A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 2.4W (Ta), 32W (Tc), Drain to Source Voltage (Vdss): 40V, Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V, Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V, Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V, FET Feature: Standard, Vgs(th) (Max) @ Id: 3.5V @ 50µA, Supplier Device Package: DFN5060B-8, Grade: Automotive, Qualification: AEC-Q101.
Weitere Produktangebote PJQ5948V-AU_R2_002A1 nach Preis ab 0.77 EUR bis 1.97 EUR
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PJQ5948V-AU_R2_002A1 | Hersteller : Panjit International Inc. |
Description: MOSFET 2N-CH 40V 10.5A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.4W (Ta), 32W (Tc) Drain to Source Voltage (Vdss): 40V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 35A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 673pF @ 25V Rds On (Max) @ Id, Vgs: 13.4mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 9.5nC @ 10V FET Feature: Standard Vgs(th) (Max) @ Id: 3.5V @ 50µA Supplier Device Package: DFN5060B-8 Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJQ5948V-AU_R2_002A1 | Hersteller : Panjit |
MOSFET 40V Dual N-Channel Enhancement Mode MOSFET |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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PJQ5948V-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 140A Power dissipation: 32W Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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PJQ5948V-AU_R2_002A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 40V; 35A; Idm: 140A; 32W Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 40V Drain current: 35A Pulsed drain current: 140A Power dissipation: 32W Gate-source voltage: ±20V On-state resistance: 17mΩ Mounting: SMD Gate charge: 9.5nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
Produkt ist nicht verfügbar |