PJT138K-AU_R1_000A1 PanJit Semiconductor
Hersteller: PanJit Semiconductor
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 50V
Drain current: 0.36A
Pulsed drain current: 1.2A
Power dissipation: 236mW
Case: SOT363
Gate-source voltage: ±20V
On-state resistance: 4.5Ω
Mounting: SMD
Gate charge: 1nC
Kind of package: reel; tape
Kind of channel: enhanced
Application: automotive industry
Anzahl je Verpackung: 5 Stücke
auf Bestellung 3000 Stücke:
Lieferzeit 7-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 360+ | 0.2 EUR |
| 650+ | 0.11 EUR |
| 725+ | 0.099 EUR |
| 865+ | 0.083 EUR |
| 915+ | 0.078 EUR |
| 9000+ | 0.075 EUR |
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Technische Details PJT138K-AU_R1_000A1 PanJit Semiconductor
Category: Multi channel transistors, Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW, Type of transistor: N-MOSFET x2, Polarisation: unipolar, Drain-source voltage: 50V, Drain current: 0.36A, Pulsed drain current: 1.2A, Power dissipation: 236mW, Case: SOT363, Gate-source voltage: ±20V, On-state resistance: 4.5Ω, Mounting: SMD, Gate charge: 1nC, Kind of package: reel; tape, Kind of channel: enhanced, Application: automotive industry, Anzahl je Verpackung: 5 Stücke.
Weitere Produktangebote PJT138K-AU_R1_000A1 nach Preis ab 0.058 EUR bis 0.59 EUR
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PJT138K-AU_R1_000A1 | Hersteller : PanJit Semiconductor |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 50V; 360mA; Idm: 1.2A; 236mW Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 50V Drain current: 0.36A Pulsed drain current: 1.2A Power dissipation: 236mW Case: SOT363 Gate-source voltage: ±20V On-state resistance: 4.5Ω Mounting: SMD Gate charge: 1nC Kind of package: reel; tape Kind of channel: enhanced Application: automotive industry |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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PJT138K-AU_R1_000A1 | Hersteller : Panjit |
 MOSFET 50V N-Channel Enhancement Mode MOSFETESD Protected |
auf Bestellung 15385 Stücke: Lieferzeit 10-14 Tag (e) |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |
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| PJT138K-AU_R1_000A1 | Hersteller : Panjit International Inc. | Description: 50V N-CHANNEL ENHANCEMENT MODE M |
Produkt ist nicht verfügbar |