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PJT7601_R1_00001

PJT7601_R1_00001 Panjit International Inc.


Hersteller: Panjit International Inc.
Description: MOSFET N/P-CH 20V 0.5A SOT363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 3000 Stücke:

Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
3000+0.23 EUR
Mindestbestellmenge: 3000
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Technische Details PJT7601_R1_00001 Panjit International Inc.

Description: MOSFET N/P-CH 20V 0.5A SOT363, Packaging: Tape & Reel (TR), Package / Case: 6-TSSOP, SC-88, SOT-363, Mounting Type: Surface Mount, Configuration: N and P-Channel Complementary, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 350mW (Ta), Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 500mA (Ta), Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V, Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V, FET Feature: Logic Level Gate, 1.2V Drive, Vgs(th) (Max) @ Id: 1V @ 250µA, Supplier Device Package: SOT-363.

Weitere Produktangebote PJT7601_R1_00001 nach Preis ab 0.21 EUR bis 0.69 EUR

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PJT7601_R1_00001 PJT7601_R1_00001 Hersteller : Panjit PJT7601-1869179.pdf MOSFET 20V Complementary Enhancement Mode MOSFETESD Protected
auf Bestellung 3512 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
5+0.67 EUR
10+ 0.57 EUR
100+ 0.43 EUR
500+ 0.34 EUR
1000+ 0.27 EUR
3000+ 0.23 EUR
9000+ 0.21 EUR
Mindestbestellmenge: 5
PJT7601_R1_00001 PJT7601_R1_00001 Hersteller : Panjit International Inc. Description: MOSFET N/P-CH 20V 0.5A SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: N and P-Channel Complementary
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 350mW (Ta)
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 500mA (Ta)
Input Capacitance (Ciss) (Max) @ Vds: 67pF @ 10V, 38pF @ 10V
Rds On (Max) @ Id, Vgs: 400mOhm @ 500mA, 4.5V, 1.2Ohm @ 500mA, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 1.4nC @ 4.5V
FET Feature: Logic Level Gate, 1.2V Drive
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-363
auf Bestellung 5827 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis ohne MwSt
26+0.69 EUR
31+ 0.58 EUR
100+ 0.41 EUR
500+ 0.32 EUR
1000+ 0.26 EUR
Mindestbestellmenge: 26
PJT7601-R1-00001 PJT7601-R1-00001 Hersteller : Panjit PJT7601-1869179.pdf MOSFET SOT-363/MOS/SOT/NFET-20TSNP
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